中文簡介

該雜志為從事晶體生長的實驗和理論方面的研究以及晶體生長在器件等方面的應(yīng)用提供了一個共同的參考和出版來源。實驗和理論貢獻(xiàn)發(fā)表在以下領(lǐng)域:成核和生長理論、分子動力學(xué)和輸運現(xiàn)象、聚合物和玻璃等粘性介質(zhì)中的結(jié)晶;金屬、礦物、半導(dǎo)體、超導(dǎo)體、磁性、無機、有機和生物物質(zhì)的晶體生長或作為薄膜;分子束外延、化學(xué)氣相沉積、III-V、II-VI等半導(dǎo)體的生長;用物理和化學(xué)方法表征單晶;晶體生長的儀器、儀器和技術(shù)以及純化方法;多層異質(zhì)結(jié)構(gòu)及其表征，重點在晶體生長和外延方面的電子材料。該雜志的一個特色是定期收錄有關(guān)晶體生長相關(guān)方面的研討會和會議記錄。

　　英文簡介

The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.

　　近年期刊自引率趨勢圖

　　JCR分區(qū)

JCR分區(qū)等級	JCR所屬學(xué)科	分區(qū)	影響因子
Q3	PHYSICS, APPLIED	Q3	1.83
	CRYSTALLOGRAPHY	Q3
	MATERIALS SCIENCE, MULTIDISCIPLINARY	Q4

　　近年期刊影響因子趨勢圖

　　CiteScore數(shù)值

CiteScore	SJR	SNIP	學(xué)科類別	分區(qū)	排名	百分位
3.50	0.430	0.839	大類：Materials Science 小類：Materials Chemistry	Q2	124 / 298	58%
			大類：Materials Science 小類：Condensed Matter Physics	Q2	188 / 415	54%
			大類：Materials Science 小類：Inorganic Chemistry	Q2	35 / 72	52%

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